Oxford Instruments OpAL Atomic Layer Deposition (ALD) System

Overview

The Oxford Instruments OpAL is a Plasma-Enhanced and Thermal Atomic Layer Deposition (ALD) System designed for the deposition of ultra-thin, conformal films with atomic-scale thickness control. The system supports both thermal ALD and plasma-enhanced ALD (PEALD) processes, making it suitable for semiconductor manufacturing, MEMS fabrication, nanotechnology, photonics, and advanced materials research.

The OpAL features a single open-loop (non-load-locked) vacuum chamber, a heated substrate stage, and an integrated downstream RF plasma source for high-quality thin-film deposition. It is an ideal platform for universities, research laboratories, cleanrooms, and pilot semiconductor fabrication facilities requiring flexible ALD process development.

---

Key Features

• Manufacturer: Oxford Instruments
• Model: OpAL
• Equipment Type: Atomic Layer Deposition (ALD) System
• Category: Atomic Layer Deposition (ALD)
• Deposition Modes: Thermal ALD and Plasma-Enhanced ALD (PEALD)
• Condition: Used Semiconductor Equipment

---

Typical Applications

• High-k dielectric deposition
• Gate oxide and passivation layers
• Semiconductor device fabrication
• MEMS manufacturing
• Nanotechnology research
• Photonics and optoelectronics
• Advanced materials development
• Surface functionalization
• University cleanroom laboratories
• Pilot semiconductor fabrication facilities

---

Technology Advantages

• Atomic-scale thickness control
• Excellent film conformality on complex structures
• Plasma-enhanced and thermal deposition capability
• Precise programmable ALD process sequences
• Excellent process repeatability
• Suitable for research and pilot-scale manufacturing

---

Equipment Information

Parameter	Specification
Manufacturer	Oxford Instruments
Model	OpAL
Equipment Type	Atomic Layer Deposition (ALD) System
Category	Atomic Layer Deposition (ALD)
Deposition Modes	Thermal ALD / Plasma-Enhanced ALD (PEALD)
Vacuum Chamber	Single Open-Loop (Non-Load-Locked)
Heated Substrate Table	8.25-inch Diameter
Substrate Temperature Range	80°C – 300°C
Recommended Process Temperature	100°C – 250°C
Plasma Source	300 W Downstream RF Plasma Head
Plasma Isolation Valve	Included
Precursor Channels	2 Metal-Organic Precursor Lines
Oxidant Channel	1 Water (H₂O) Line
Process Control	Programmable Dose/Purge Cycle Software
Electrical Requirements	208 V, 3-Phase, 60 Hz, 25 A
Equipment Condition	Used

---

Request a Quote

Interested in this equipment?

South Asia Semiconductor (SAS) provides international semiconductor equipment sourcing services for universities, research institutions, semiconductor manufacturers, foundries, and industrial customers.

Click Request a Quote to receive:

• Current availability
• Equipment condition
• Pricing
• Shipping options
• Technical specifications
• Installation support information

---

Important Notice

Product image is provided for marketing and illustrative purposes only. The image shown may not represent the exact equipment available from the supplier. Actual equipment may vary in appearance, configuration, manufacturing year, installed options, accessories, specifications, and condition.

Technical specifications are based on information provided by the equipment supplier. Buyers are encouraged to confirm the final configuration, installed options, process capabilities, and utility requirements before purchase.

South Asia Semiconductor (SAS) provides semiconductor equipment sourcing and procurement services through trusted international suppliers. SAS does not claim ownership of the equipment unless explicitly stated. Equipment specifications, availability, pricing, condition, lead time, and final configuration are subject to confirmation by the supplier at the time of inquiry. Photographs, inspection reports, and detailed technical documentation can be provided to qualified buyers upon request.