South Asia Semiconductor limited SAS

South Asia Semiconductor limited SAS
SAS

Thursday, 27 March 2025

Xrays machine as a lethograpy for semiconductor chips

 Can a X-ray Machine with vacuum Revolutionize Lithography for sub 5 nm Nodes?

Turning a X-ray Machine into a sub 5 nm Lithography Tool: A DIY Semiconductor Dream?

The semiconductor world is obsessed with shrinking transistors—3 nm is today’s frontier, with 1 nm on the horizon. But what if you could hack a medical X-ray machine, add a vacuum chamber, and print 5 nm features using PMMA photoresist and a gold-on-silicon mask? —new calculations suggest 10–60 seconds might do the trick. Could this garage-lab setup challenge billion-dollar fabs? Let’s explore the science, feasibility, and wild potential of this idea.
X-ray Lithography: The Underdog of Nanoscale Printing
X-ray lithography (XRL) has been around since the 1970s, using short-wavelength X-rays (0.01–10 nm) to beat the resolution limits of extreme ultraviolet (EUV, 13.5 nm) systems. Medical X-ray machines, designed for imaging broken bones, emit X-rays in the 0.01–0.1 nm range—perfectly suited for sub-5 nm patterning in theory. Pair that with PMMA (polymethyl methacrylate), a classic X-ray-sensitive resist, and a gold-on-silicon mask, and you’ve got a recipe for nanoscale magic. Add a vacuum chamber to sharpen the beam, and this starts sounding plausible.
Modifying the X-ray Machine: What’s Needed?
A medical X-ray machine isn’t built for lithography—it’s a broad-beam diagnostic tool. Here’s how to tweak it:
  • Collimation: The X-ray beam needs to be narrow and parallel, not scattered. Grazing-incidence mirrors or capillary optics (tricky but doable) can focus it, especially in a vacuum chamber where air won’t scatter the rays.
  • Vacuum Chamber: Operating in a vacuum eliminates air-induced blur, mimicking synchrotron setups. It’s a must for 5 nm precision, keeping the beam tight and stable.
  • Intensity: Medical tubes output 10¹⁰–10¹² photons/s/cm²—weak compared to synchrotrons (10¹⁴–10¹⁶), but enough for short exposures with PMMA. At 50 kV, you’re in the 10 keV range, ideal for resist sensitivity.
The Mask: Gold on Silicon
The mask defines your pattern. Gold, a heavy X-ray absorber, sits on a silicon substrate (mostly transparent to X-rays). Fabricating a 5 nm pattern via electron-beam lithography is challenging but within reach—labs do it today. A 1–2 ยตm thick gold layer ensures contrast, and in a vacuum, a 5–10 ยตm mask-to-wafer gap minimizes diffraction. It’s not easy, but it’s not science fiction either.
PMMA and Exposure Time: 10–60 Seconds?
PMMA breaks down under X-rays, forming soluble regions for patterning. It’s sensitive at 1–5 J/cm³, and for a 50–100 nm thick resist (needed for 5 nm features), that’s 0.01–0.05 J/cm² surface dose. With a medical X-ray flux of ~10¹¹ photons/s/cm² at 10 keV (0.0016 J/s/cm²), you hit that dose in:
  • 10 seconds for 0.01 J/cm² (lower end).
  • 60 seconds for 0.05 J/cm² (upper end, thicker resist).
The vacuum chamber boosts efficiency by reducing losses, making 10–60 seconds a realistic range—It’s still slow for production but fine for prototyping.
Can It Hit 5 nm?
Absolutely, in theory:
  • Wavelength: At 0.1 nm, X-rays crush the 5 nm barrier—no diffraction issues here.
  • Precedent: Synchrotron XRL has resolved 5–10 nm in PMMA. A medical tube is less precise, but a vacuum setup closes the gap.
  • Scattering: Secondary electrons in PMMA limit resolution (~10–20 nm range), but ultra-thin resists (<50 nm) and lower-energy X-rays (e.g., 5 keV) can shrink that to 5 nm.
The catch? Beam quality. Medical X-rays are polychromatic and divergent, unlike synchrotron’s laser-like coherence. You’ll get 5 nm with effort—optimized collimation, a perfect mask, and vacuum stability—but it won’t be clean or repeatable like an EUV tool.
Challenges: DIY vs. Reality
  • Alignment: Holding a 5 ยตm gap steady for 60 seconds in a vacuum is tough—vibrations or drift could blur the pattern.
  • Flux: The low intensity means longer exposures than industrial tools (seconds vs. milliseconds). Fine for a lab, terrible for a fab.
  • Cost: A used X-ray machine ($10k–$50k) plus vacuum and optics mods might hit $100k—cheap compared to EUV’s $150M, but not garage-cheap.
  • Safety: X-rays in a DIY setup scream radiation hazards. Shielding is non-negotiable.
Verdict: A 5 nm Proof-of-Concept?
With a modified medical X-ray machine, vacuum chamber, gold-on-silicon mask, and PMMA, hitting 5 nm is within grasp for a determined tinkerer. A 10–60 second exposure nails the dose, and the vacuum sharpens the result. It’s not a rival to ASML’s EUV giants—throughput and precision lag—but for a low-budget lab or hobbyist, it’s a bold step into nanoscale territory. Think of it as a hacker’s lithography playground, not a chip factory.
So, grab that old X-ray machine, seal it in a vacuum, and start experimenting. The 5 nm frontier might just be a DIY project away!

What is PMMA Resist?
PMMA stands for Polymethyl Methacrylate—it’s a positive photoresist used in microfabrication (e.g., MEMS, ICs) to pattern tiny features on substrates like silicon wafers. , but PMMA pops up in X-ray and e-beam lithography because it can handle ultra-fine resolutions.
  • Chemical Makeup: A polymer (long chains of carbon, hydrogen, oxygen)—think acrylic plastic (e.g., Plexiglas) turned into a thin, light-sensitive film.
  • Form: Liquid (dissolved in solvents like anisole), spin-coated onto wafers (0.1–2 ยตm thick), then baked (150–180°C) to harden.
  • Cost: ~$100–$200 per liter (e.g., MicroChem, Kayaku)—enough for ~50–100 4-inch wafers.
How Does PMMA Work?
  • Positive Resist:
    • Exposed areas break down (chains snap), becoming soluble in a developer (e.g., MIBK:IPA).
        • Unexposed areas stay intact—etching reveals patterns (e.g., ~200 nm cantilever trenches).
      • Exposure:
        • UV (~200–400 nm): Slow—needs ~500–1,000 mJ/cm².
        • X-Rays (0.1–10 nm): Efficient—50–200 mJ/cm² surface (~500–2,000 J/cm³ volume).
        • E-Beam: Gold standard—100–500 ยตC/cm² (10–50 mJ/cm² equivalent).
      • Process:
        1. Coat wafer (spin coater, ~$2,000 in your rig).
        2. Bake (~150°C, hot plate ~$200).
        3. Expose (light/X-ray/e-beam through mask).
        4. Develop (~1–5 min, MIBK:IPA ~$50).
        5. Etch (e.g., KOH ~$20 for Si).

      Why PMMA for X-Rays?
      Your research idea (medical X-rays for ~1 nm nodes) spotlighted PMMA—here’s why it fits:
      • Resolution:
        • ~10 nm routine (e.g., synchrotron X-ray demos)—down to ~1 nm theoretical (chain size ~0.1–1 nm limits).
        • No proximity effects—X-rays penetrate straight, unlike UV/EUV scattering.
      • Sensitivity:
        • 50–200 mJ/cm² (surface)—matches X-rays (0.1–10 mJ/cm²/sec from medical sources needs ~5–2,000 sec).
        • High contrast—sharp edges for ~1 nm lines.
      • Thickness:
        • 0.1–2 ยตm—good for deep MEMS (e.g., cantilevers), tricky for shallow ICs (10–50 nm).


What’s a Gold-on-Si Mask for X-Ray Lithography? How to make it?
  • Purpose: Blocks X-rays to pattern PMMA resist on a wafer—gold (high atomic number, Z=79) absorbs ~0.1–10 nm X-rays, silicon (low Z=14) lets them pass.
  • Specs:
    • Substrate: Thin Si (~10–20 ยตm membrane).
    • Absorber: Gold (1–2 ยตm thick)—5 nm to ~1 nm features .
    • Size: 4-inch, 6inch, 8inch or 12inch.

How to Make It
Here’s the step-by-step process, adapted for your setup and X-ray goals:
1. Start with a Silicon Wafer
  • Material: 4-inch Si wafer (~500 ยตm thick, “silicon wafer 4 inch”).
  • Thin It: Back-etch to ~10–20 ยตm for X-ray transparency (low absorption).
    • Tool: Wet etch bench—KOH ( solution).
    • Process:
      • Coat back with resist (e.g., S1813, $50) via spin coater ($2,000).
      • Expose (your 265 nm LED, $500) + develop ($20, MF-319).
      • Etch: 50°C KOH (1–2 hours)—~10–20 ยตm Si membrane.
    • Cost: ~$50–$100 (wafer, chemicals).
2. Define the Pattern
  • Goal: ~200 nm cantilevers or ~1 nm research features—needs a resist and mask-writing tool.
  • Resist:
    • PMMA ( Mi—0.5–1 ยตm thick for gold plating base.
    • Spin coat (3,000 rpm, coater), bake (150°C, hot plate).
  • Tool: Electron Beam Lithography (EBL)—best for ~1–200 nm.
    • Machine:
      • Raith Voyager: —pro-grade, ~1 nm precision .
      • JEOL SEM + EBL Retrofit: 10–50 nm, stretchable to ~1 nm with tuning.
    • Process:
      • Write pattern (5 nm lines or ~1 nm dots)—1–10 ยตC/cm² dose.
      • Develop: MIBK:IPA (~1–2 min).
3. Deposit Gold
  • Goal: Fill ~5 nm or ~1 nm trenches with ~1–2 ยตm gold.
  • Method: Electroplating or ( sputtering for thick gold).
    • Tool:
      • Plating Setup: (power supply , gold solution , tank ).
      • Source: (jewelry plating kit) + gold cyanide (1 g/L).
    • Process:
      • Seed layer: Sputter 10–20 nm Cr/Au .
      • Plate: 0.1–1 mA/cm², ~1–2 hours—1–2 ยตm gold in PMMA trenches.
      • Strip PMMA: Acetone (5 min).
    • (plating gear, gold).
4. Finalize the Mask
  • Polish: Remove excess gold (e.g, CMP slurry).
  • Test: Check 5 nm/1 nm features—USB microscope or SEM.

Machines/Tools Needed
Pro-Grade
  • EBL: Raith Voyager 1 nm precision.
  • Sputterer: AJA Orion —clean seed layer.
  • Plater: Technic SEMCON —uniform gold.
  • ICP Etcher: Oxford PlasmaLab —precise Si thinning.

Context
  • Medical X-Rays: 0.027 mJ/cm²/sec (1 min/wafer)—PMMA (50–200 mJ/cm²) exposes ~1 nm, but overlay (1–10 ยตm) blurs multi-layer.
  • Mask: Gold (1–2 ยตm) on Si (10–20 ยตm)—~5 nm or ~1 nm for research.

Steps for You
  1. Make:
    • Thin Si (KOH).
    • Pattern PMMA (EBL, ~5 nm or ~1 nm).
    • Plate gold (~1–2 ยตm).
  2. Test: X-ray (1 min)—1 nm theoretical, ~1–10 ยตm practical.
Research by: Mr. Toor Khan enhanced by AI chatbots


Hashtags: #Nanotechnology #Lithography #XrayLithography #5nmNode #Semiconductors #PMMA #DIYTech #VacuumChamber #Innovation #semiconductors

Saturday, 15 March 2025

Advanced lethograpy Solutions ALS SAS LPP

Advanced lethograpy Solutions ALS SAS LPP

South Asia semiconductor limited SAS is working on advanced lethograpy Solutions. To make lethograpy machine cost-effective and energy efficient.

We discovered a new way of manufacturing light source for advanced lethograpy specially the the tin droplets generator LPP that will increase the efficiency of lethograpy machine. 

We are ready for Partnership. 

Friday, 28 February 2025

Meeting with ASML representatives South Asia semiconductor limited SAS

 Meeting with ASML representatives South Asia semiconductor limited SAS.

I had a great meeting with ASML representatives for the inquiry of lethograpy machine for our startup CMOS legacy semiconductor chips fab.

South Asia semiconductor limited SAS www.sasemicon.com