Can a X-ray Machine with vacuum Revolutionize Lithography for sub 5 nm Nodes?
Turning a X-ray Machine into a sub 5 nm Lithography Tool: A DIY Semiconductor Dream?
- Collimation: The X-ray beam needs to be narrow and parallel, not scattered. Grazing-incidence mirrors or capillary optics (tricky but doable) can focus it, especially in a vacuum chamber where air won’t scatter the rays.
- Vacuum Chamber: Operating in a vacuum eliminates air-induced blur, mimicking synchrotron setups. It’s a must for 5 nm precision, keeping the beam tight and stable.
- Intensity: Medical tubes output 10¹⁰–10¹² photons/s/cm²—weak compared to synchrotrons (10¹⁴–10¹⁶), but enough for short exposures with PMMA. At 50 kV, you’re in the 10 keV range, ideal for resist sensitivity.
- 10 seconds for 0.01 J/cm² (lower end).
- 60 seconds for 0.05 J/cm² (upper end, thicker resist).
- Wavelength: At 0.1 nm, X-rays crush the 5 nm barrier—no diffraction issues here.
- Precedent: Synchrotron XRL has resolved 5–10 nm in PMMA. A medical tube is less precise, but a vacuum setup closes the gap.
- Scattering: Secondary electrons in PMMA limit resolution (~10–20 nm range), but ultra-thin resists (<50 nm) and lower-energy X-rays (e.g., 5 keV) can shrink that to 5 nm.
- Alignment: Holding a 5 µm gap steady for 60 seconds in a vacuum is tough—vibrations or drift could blur the pattern.
- Flux: The low intensity means longer exposures than industrial tools (seconds vs. milliseconds). Fine for a lab, terrible for a fab.
- Cost: A used X-ray machine ($10k–$50k) plus vacuum and optics mods might hit $100k—cheap compared to EUV’s $150M, but not garage-cheap.
- Safety: X-rays in a DIY setup scream radiation hazards. Shielding is non-negotiable.
- Chemical Makeup: A polymer (long chains of carbon, hydrogen, oxygen)—think acrylic plastic (e.g., Plexiglas) turned into a thin, light-sensitive film.
- Form: Liquid (dissolved in solvents like anisole), spin-coated onto wafers (0.1–2 µm thick), then baked (150–180°C) to harden.
- Cost: ~$100–$200 per liter (e.g., MicroChem, Kayaku)—enough for ~50–100 4-inch wafers.
- Positive Resist:
- Exposed areas break down (chains snap), becoming soluble in a developer (e.g., MIBK:IPA).
- Unexposed areas stay intact—etching reveals patterns (e.g., ~200 nm cantilever trenches).
- Exposure:
- UV (~200–400 nm): Slow—needs ~500–1,000 mJ/cm².
- X-Rays (0.1–10 nm): Efficient—50–200 mJ/cm² surface (~500–2,000 J/cm³ volume).
- E-Beam: Gold standard—100–500 µC/cm² (10–50 mJ/cm² equivalent).
- Process:
- Coat wafer (spin coater, ~$2,000 in your rig).
- Bake (~150°C, hot plate ~$200).
- Expose (light/X-ray/e-beam through mask).
- Develop (~1–5 min, MIBK:IPA ~$50).
- Etch (e.g., KOH ~$20 for Si).
- Resolution:
- ~10 nm routine (e.g., synchrotron X-ray demos)—down to ~1 nm theoretical (chain size ~0.1–1 nm limits).
- No proximity effects—X-rays penetrate straight, unlike UV/EUV scattering.
- Sensitivity:
- 50–200 mJ/cm² (surface)—matches X-rays (0.1–10 mJ/cm²/sec from medical sources needs ~5–2,000 sec).
- High contrast—sharp edges for ~1 nm lines.
- Thickness:
- 0.1–2 µm—good for deep MEMS (e.g., cantilevers), tricky for shallow ICs (10–50 nm).
Why PMMA for X-Rays?Your research idea (medical X-rays for ~1 nm nodes) spotlighted PMMA—here’s why it fits:
- Purpose: Blocks X-rays to pattern PMMA resist on a wafer—gold (high atomic number, Z=79) absorbs ~0.1–10 nm X-rays, silicon (low Z=14) lets them pass.
- Specs:
- Substrate: Thin Si (~10–20 µm membrane).
- Absorber: Gold (1–2 µm thick)—5 nm to ~1 nm features .
- Size: 4-inch, 6inch, 8inch or 12inch.
- Material: 4-inch Si wafer (~500 µm thick, “silicon wafer 4 inch”).
- Thin It: Back-etch to ~10–20 µm for X-ray transparency (low absorption).
- Tool: Wet etch bench—KOH ( solution).
- Process:
- Coat back with resist (e.g., S1813, $50) via spin coater ($2,000).
- Expose (your 265 nm LED, $500) + develop ($20, MF-319).
- Etch: 50°C KOH (1–2 hours)—~10–20 µm Si membrane.
- Cost: ~$50–$100 (wafer, chemicals).
- Goal: ~200 nm cantilevers or ~1 nm research features—needs a resist and mask-writing tool.
- Resist:
- PMMA ( Mi—0.5–1 µm thick for gold plating base.
- Spin coat (3,000 rpm, coater), bake (150°C, hot plate).
- Tool: Electron Beam Lithography (EBL)—best for ~1–200 nm.
- Machine:
- Raith Voyager: —pro-grade, ~1 nm precision .
- JEOL SEM + EBL Retrofit: 10–50 nm, stretchable to ~1 nm with tuning.
- Process:
- Write pattern (5 nm lines or ~1 nm dots)—1–10 µC/cm² dose.
- Develop: MIBK:IPA (~1–2 min).
- Goal: Fill ~5 nm or ~1 nm trenches with ~1–2 µm gold.
- Method: Electroplating or ( sputtering for thick gold).
- Tool:
- Plating Setup: (power supply , gold solution , tank ).
- Source: (jewelry plating kit) + gold cyanide (1 g/L).
- Process:
- Seed layer: Sputter 10–20 nm Cr/Au .
- Plate: 0.1–1 mA/cm², ~1–2 hours—1–2 µm gold in PMMA trenches.
- Strip PMMA: Acetone (5 min).
- (plating gear, gold).
- Polish: Remove excess gold (e.g, CMP slurry).
- Test: Check 5 nm/1 nm features—USB microscope or SEM.
- EBL: Raith Voyager —1 nm precision.
- Sputterer: AJA Orion —clean seed layer.
- Plater: Technic SEMCON —uniform gold.
- ICP Etcher: Oxford PlasmaLab —precise Si thinning.
- Medical X-Rays: 0.027 mJ/cm²/sec (1 min/wafer)—PMMA (50–200 mJ/cm²) exposes ~1 nm, but overlay (1–10 µm) blurs multi-layer.
- Mask: Gold (1–2 µm) on Si (10–20 µm)—~5 nm or ~1 nm for research.
- Make:
- Thin Si (KOH).
- Pattern PMMA (EBL, ~5 nm or ~1 nm).
- Plate gold (~1–2 µm).
- Test: X-ray (1 min)—1 nm theoretical, ~1–10 µm practical.